Modeling of low-frequency noise in GaInP/GaAs hetero-bipolar transistors

Author

Heymann, P. ; Rudolph, M. ; Doerner, R. ; Lenk, F.

Author_Institution

FBH, Berlin, Germany

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1967

Abstract

Accurate low-frequency noise modeling is a prerequisite for oscillator phase-noise simulation. In this paper, the LF noise sources of GaInP/GaAs HBTs are investigated. It turns out that the 1/f-noise model must contain two sources, the base-emitter diode and the emitter resistance. Quantitatively, excess noise power at 100 kHz scales with the square of collector current-density.

Keywords

1/f noise; III-V semiconductors; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; 1/f-noise model; 100 kHz; GaInP-GaAs; base-emitter diode; collector current-density; emitter resistance; excess noise power; hetero-bipolar transistors; low-frequency noise modelling; noise sources; oscillator phase-noise simulation; Circuit noise; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Microwave transistors; Noise measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967295

Filename

967295