Title :
Study and Optimization of Bipolar Power Transistors using Mixed-Mode Simulations
Author :
Schligtenhorst, H. ; Hurkx, G.A.M. ; Notley, R. ; Huang, E.
Author_Institution :
Philips Research Laboratories, Prof. Holstlaan, 5656 AA Eindhoven, The Netherlands
Abstract :
The influence of the dopant profiles of bipolar power transistors on their switching behaviour in TV deflection circuits is studied by using mixed-mode circuit/device simulations. In particular, the influence of the base profile on the energy dissipation under different drive conditions is investigated.
Keywords :
Bipolar transistor circuits; Breakdown voltage; Circuit simulation; Circuit testing; Drives; Energy dissipation; Inductors; Power transistors; Switching circuits; TV;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
