Title :
Review Paper - RADFETs for Improved Radiation Sensitivity
Author :
O´Connell, B. ; Lane, W. ; Kelleher, A. ; Adams, L.
Author_Institution :
National Microelectronic Research Centre, U.C.C., Cork, Ireland,
Abstract :
This paper reports primarily on further investigation of a design approach, where RADFETs are connected in a stacked sequence so that increased radiation sensitivity is obtained. This enables radiation sensitivities in the milli-rad range to be measured.
Keywords :
Circuits; Diodes; Doping; Dosimetry; Equations; Fading; Microelectronics; Personnel; Stacking; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
