High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs

Author

DiMarino, Christina ; Zheng Chen ; Danilovic, Milisav ; Boroyevich, Dushan ; Burgos, Rolando ; Mattavelli, Paolo

Author_Institution

Dept. of Electr. & Comput. Eng., Virginia Tech, Blacksburg, VA, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

3235

Lastpage

3242

Abstract

The aim of this work is to characterize and compare the high-temperature performances of the latest generation 1.2 kV Silicon Carbide (SiC) MOSFETs from three well-known manufacturers: Cree, ROHM, and GE. A complete static characterization is performed from 25 °C to 200 °C, including threshold voltage, specific on-resistance, leakage current, junction capacitances, and internal gate resistance. The dynamic performance of each device is evaluated through double-pulse tests conducted from 25 °C to 200 °C. From these double-pulse tests, the switching losses are computed.

Keywords

leakage currents; power MOSFET; silicon compounds; wide band gap semiconductors; Cree; GE; ROHM; SiC; complete static characterization; double-pulse tests; dynamic performance; high-temperature characterization; internal gate resistance; junction capacitances; leakage current; power MOSFET; specific on-resistance; switching losses; temperature 20 degC to 200 degC; threshold voltage; voltage 1.2 kV; Capacitance; Current measurement; Logic gates; MOSFET; Resistance; Silicon carbide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6647125

Filename

6647125