DocumentCode :
1930217
Title :
120 nm resolution and 55nm line width achieved in visible light STED-lithography
Author :
Klar, Thomas A. ; Wollhofen, R. ; Jacak, J.
Author_Institution :
Inst. of Appl. Phys., Johannes Kepler Univ., Linz, Austria
fYear :
2013
fDate :
12-16 May 2013
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. STED (stimulated emission depletion) nanoscopy[1, 2] has proven to provide even sub-10 nm resolution[3] in far field fluorescence microscopy and has found ample applications in biology or materials science. Similar to the development two-photon lithography[4] out of the concept of two-photon microscopy, it was proposed already in the very first reports on STED nanoscopy that the confined effective excitation volume can be used to spatially define chemical reactions on the nanometre scale.[1, 2] STED-inspired diffraction-unlimited lithography has been experimentally verified recently.[5-7]. In this presentation, we will address the question of minimal lateral structure size and minimal lateral resolution in STED-lithography. We show that single lines can be polymerized with a lateral width of only 55 nm and a full width at half maximum of 34 nm.[8] To the best of our knowledge, this is a new hitherto unreached limit in lithography using low energetic visible light photons. We further find that the resolution in STED-lithography can be pushed down to 120 nm. “Resolution” herewith refers to the minimal distance, at which two adjacent, yet separated lines can be written. The structures show good biocompatibility and allow for bio-functionalization with proteins, possibly down to a single protein level. The ability to place individual proteins into nano-confined spaces opens intriguing applications in bioscience, ranging from basic studies in biology to the development of localized, nanoscopic sensors. While STED-lithography cannot (yet) compete with electron beam, ion beam or UV lithography, there is justified hope that both, resolution and feature size can further be improved, similar to the progress in STED nanoscopy which started with a resolution above 100 nm[1] and has reached sub-10 nm resolution meanwhile.[3] Compared to UV and e-beam lithography, STED-DLW has two major advantages. First, it can be applied for three dimen- ional structuring. Second, photons of visible light contain much less energy per photon compared to UV photons or accelerated electrons or ions. Consequently, lithography on photosensitive substrates such as on polymers or even in living tissue might become in reach.
Keywords :
biochemistry; biological techniques; biological tissues; electron beam lithography; fluorescence; ion beam lithography; molecular biophysics; nanophotonics; nanosensors; optical microscopy; optical sensors; proteins; spectral line breadth; stimulated emission; two-photon processes; ultraviolet lithography; visible spectra; STED nanoscopy; STED-DLW; STED-inspired diffraction-unlimited lithography; UV lithography; UV photon; accelerated electrons; accelerated ions; bio-functionalization; biocompatibility; biology; bioscience; chemical reactions; confined effective excitation volume; electron beam lithography; far field fluorescence microscopy; feature size; full width at half maximum; individual proteins; ion beam lithography; lateral width; line width; living tissue; localized sensors; low energetic visible light photons; materials science; minimal distance; minimal lateral resolution; minimal lateral structure size; nanoconfined spaces; nanometre scale; nanoscopic sensors; photosensitive substrates; polymers; single protein level; stimulated emission depletion nanoscopy; subnanometer resolution; three dimensional structuring; two-photon lithography; two-photon microscopy; visible light STED-lithography; wavelength 120 nm; wavelength 34 nm; wavelength 55 nm; Energy resolution; Fluorescence; Lithography; Microscopy; Nanobioscience; Photonics; Proteins;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2013.6801550
Filename :
6801550
Link To Document :
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