Title :
GaN-based devices
Author :
Shur, Michael S.
Author_Institution :
Center for Broadband Data Transp., Troy, NY, USA
Abstract :
We review the history, potential applications and characteristics of GaN-based devices, including devices based on polarization effects, such as pyroelectric and piezoelectric sensors and oscillating electron and hole islands in semiconductor grains embedded into a pyroelectric matrix; GaN-based heterostructure field effect transistors (HFETs); SAW and acousto-optics devices; UV light emitting diodes, and THz plasma wave electronics devices using GaN HFETs.
Keywords :
III-V semiconductors; acousto-optical devices; field effect transistors; gallium compounds; light emitting diodes; piezoelectric devices; pyroelectric detectors; submillimetre wave transistors; surface acoustic wave devices; wide band gap semiconductors; GaN; THz plasma wave electronics devices; UV light emitting diodes; acousto-optics devices; heterostructure field effect transistors; oscillating electron islands; oscillating hole islands; piezoelectric sensors; pyroelectric matrix; pyroelectric sensors; semiconductor devices; semiconductor grains; surface acoustic wave devices; Charge carrier processes; Electron emission; HEMTs; History; MODFETs; Optical polarization; Piezoelectric devices; Piezoelectric polarization; Pyroelectricity; Sensor phenomena and characterization;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504293
