Title :
15 kV SiC IGBT based three-phase three-level modular-leg power converter
Author :
Patel, Dhaval C. ; Kadavelugu, Arun ; Madhusoodhanan, S. ; Bhattacharya, Surya ; Hatua, Kamalesh ; Leslie, Scott ; Ryu, Sei-Hyung ; Grider, David ; Agarwal, Abhishek
Author_Institution :
FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
The 15kV /20A, 4H-SiC n-IGBT is the state-of-the-art high voltage power semiconductor device. The transformerless intelligent power substation (TIPS) [1] for 13.8kV grid interfacing is built using this device. It is proposed to use a three-phase, three-level, diode clamped topology as the front end converter (FEC) in TIPS. A modular-leg structure has been employed for FEC. In modular-leg structure, each phase-leg will have its own DC-link capacitors and a low inductance bus-bar. However, modular-leg structure adds complexity in DC bus over-load protection, which is studied in this paper. Experimental results of modular-leg converter at 3kV DC link voltage and scale down prototype of AC switch for DC bus fault protection are presented.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power convertors; silicon compounds; substation protection; wide band gap semiconductors; AC switch; DC bus fault protection; DC bus overload protection; DC-link capacitors; SiC; TIPS; current 20 A; front end converter; low inductance bus-bar; modular-leg structure; n-IGBT based three-phase three-level modular-leg power converter; phase-leg; three-phase three-level diode clamped topology; transformerless intelligent power substation; voltage 13.8 kV; voltage 15 kV; voltage 3 kV; voltage power semiconductor device; Capacitors; Insulated gate bipolar transistors; Semiconductor diodes; Silicon carbide; Surge protection; Surges; Switches;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6647132
