DocumentCode
1930380
Title
Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT , fmax ) above 25 GHz
Author
Gruhle, A. ; Badoz, P.A. ; Chevalier, F. ; Halimaoui, A. ; Lalanne, F. ; Mouis, M. ; Regolini, J.L. ; Vincent, Gregory ; Bensahel, D.
Author_Institution
CNET-CNS, BP 98, F-38243 Meylan Cedex, France
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
27
Lastpage
30
Abstract
We report the fabrication of etched-groove silicon permeable base transistors (PBTs) with mushroom-shaped 0.2-0.4 ¿m wide source fingers. This structure enables both the passivation of the Si finger sidewalls and the reinforcement of the platinum gate with a gold overlayer. The low base resistance and the optimized doping profile yielded devices with fT and fmax values up to 26 GHz.
Keywords
Conductivity; Cutoff frequency; Etching; Fabrication; Fingers; Gold; Passivation; Polyimides; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5436258
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