Spectroscopic characterization of an ECR processing plasma

Summary form only given. We have developed an electron cyclotron resonance (ECR) plasma source for plasma processing applications. The source has been used for plasma assisted nitriding, diamond-like film deposition and for sputter-deposition and ion-mixing of metallic films. The plasma characteristics can influence the properties of the processed surfaces. Therefore, the measurements of plasma parameters, preferably using a non perturbing technique, is essential. We have used visible spectroscopy to measure the electron temperature of these processing plasmas. The technique relies on the measurement of the ratio of two line intensities. In nitrogen plasma, the ratio of two molecular band heads intensities is used, whereas in other plasmas the ratio of Ar-He line intensities, injected as trace elements, is used.