Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

Author

Duenas, S. ; Castan, H. ; García, H. ; Barbolla, J. ; San Andres, E. ; Martil, I. ; Gonzales-Diaz, G. ; Kukli, K. ; Aarik, J.

Author_Institution

Departamento de Electricidad y Electronica, Univ. de Valladolid, Valadolid, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

49

Lastpage

52

Abstract

A comparison between interface quality of several temperatures thermal annealed HPRS TiO₂ films and 750 °C annealed ALD TiO₂ films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 °C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D_it density being the lowest value measured in this work (5.6 × 10¹¹ cm^-2 eV^-1), and undetectable conductance transients within our experimental limits.

Keywords

MIS structures; annealing; atomic layer deposition; dielectric thin films; interface states; sputtering; titanium compounds; 750 C; 900 C; HPRS films; MIS structures; TiO₂-Si; atomic layer deposition; dielectric thin films; disordered induced gap state densities; high-pressure reactive sputtering; interface quality; interface states; interfacial state; thermal annealing; titanium oxide thin films; Annealing; Atmosphere; Atomic layer deposition; Conductive films; Semiconductor thin films; Silicon; Sputtering; Temperature; Thermal conductivity; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504303

Filename

1504303