Title :
MOSFET behaviour after oxide breakdown
Author :
Fernandez, Raul ; Rodríguez, R. ; Nafría, M. ; Aymerich, X.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Abstract :
In this work, the influence of oxide breakdown (BD) on the MOSFET output characteristics has been studied taking into account the BD location along the channel. The results show that the BD location plays an important role on the device output characteristics. In order to quantify the variation of the MOSFET behaviour after BD the BD MOSFET model parameters for these devices have been extracted.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; BD MOSFET model parameters; BD location; MOSFET behaviour; MOSFET output characteristics; oxide breakdown; semiconductor device breakdown; Breakdown voltage; Circuit simulation; Dielectric breakdown; Electric breakdown; Integrated circuit modeling; MOS devices; MOSFET circuits; Semiconductor device modeling; Threshold voltage; Transconductance;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504306
