DocumentCode
1930613
Title
An Analytical Model for Hot-Carrier-Induced Degradation of Submicron N-MOSFET
Author
Bouchakour, R. ; Hardy, Leor ; Jourdain, M.
Author_Institution
Ecole Nationale Supérieure des Télécommunications, Département d´´Electronique, ura CNRS 820, 46 Rue Barrault, 75634 Paris cédex 13, France. Email: bouchakour@amon.enst.fr, tél: 33.1. 45.81.78.11, fax: 33.1.45.80.40.36
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
271
Lastpage
274
Abstract
This paper presents a generalized version of the MOS charge-sheet model which physically incorporates nonuniform distribution of defects along the channel into the analysis. The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fitting has been achieved between the experimental data and the simulation.
Keywords
Analytical models; Circuit simulation; Circuit synthesis; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Predictive models; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436271
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