DocumentCode
1930644
Title
Nanoscale electrical characterization of HfO2/SiO2 MOS gate stacks with enhanced-CAFM
Author
Nafria, M. ; Blasco, X. ; Porti, M. ; Aguilera, L. ; Aymerich, X. ; Petry, J. ; Vandervorst, W.
Author_Institution
Dept. d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
65
Lastpage
68
Abstract
The conduction and dielectric breakdown (BD) of an ultra-thin HfO2/SiO2 gate stack is studied at the nanoscale. With this purpose, an enhanced conductive atomic force microscope (a CAFM with extended electrical performance) has been developed. Using this new set up, different conduction modes have been observed before BD, which can be masked during standard tests. The study of the BD spots has revealed that, as for SiO2, the BD of the stack leads to modifications in the topography images and high conductive spots in the current images.
Keywords
MIS structures; atomic force microscopy; dielectric materials; electric breakdown; electrical conductivity; hafnium compounds; nanostructured materials; silicon compounds; HfO2; MIS structures; MOS gate stacks; SiO2; atomic force microscopy; conduction modes; dielectric breakdown; electric breakdown; electrical conductivity; enhanced conductive atomic force microscope; enhanced-CAFM; nanoscale electrical characterization; nanostructured materials; ultra-thin gate stacks; Atomic force microscopy; Current measurement; Electric variables measurement; Gain measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Performance evaluation; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504308
Filename
1504308
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