Title :
Refined Analytical Model of Combined Thermionic Emission and Drift-Diffusion Current Flow through Schottky Structure
Author :
Racko, J. ; Donoval, D. ; Wachutka, G.
Author_Institution :
Department of Microelectronics, Slovak Technical University in Bratislava, Ilkovicova 3, SK-812 19 Bratislava, Slovakia
Abstract :
A refined approach leading to an enhanced analytical model of current transport through a Schottky structure at high forward bias voltage is presented The derived analytical equations represent a reasonable compromise between the physical rigorosity and practical applicability of two real metal-semiconductor interfaces including the quasi-neutral layer in one compact model.
Keywords :
Analytical models; Computational modeling; Microelectronics; Schottky barriers; Schottky diodes; Semiconductor diodes; Space charge; Thermionic emission; Thyristors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
