DocumentCode
1930759
Title
Progress in High Frequency Heterojunction Field Effect Transistors
Author
Eastman, Lester F.
Author_Institution
School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Phillips Hall, Ithaca, New York, 14853-5401
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
619
Lastpage
624
Abstract
The concepts, technology and the present experimental limits of performance of heterojunction modulation doped field effect transistors are covered. Both lattice-matched and strained, pseudomorphic quantum well channels on GaAs substrates, as well as lattice-matched quantum well channels on InP substrates are included. Power gain frequency limits to 450 GHz, and noise figures as low as .8-.9 db at 60 GHz are presented for 300K operation of the latter devices.
Keywords
Aluminum; Electron mobility; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Sheet materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436281
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