Title :
A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications
Author :
McShane, E. ; Shenai, K. ; Leong, S.K.
Author_Institution :
MicroSyst. Res. Center, Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents the first results of a 1-GHz SOI RF power LDMOSFET with 115 mW of output power. A 6-W P/sub OUT/ (competitive with comparable bulk LDMOSTs) can be achieved by scaling the FET dimensions with little degradation of RF performance. Both DC and RF characteristics are presented, and model parameters are extracted. Class A amplifier results are shown to deliver a PAE of 25%, power gain of 16 dB, and 1-dB compression of 40 mW. These results are extremely encouraging for IPA development with SOI RF power LDMOSFETs.
Keywords :
UHF field effect transistors; UHF power amplifiers; power MOSFET; silicon-on-insulator; 1 GHz; 115 mW; 16 dB; 25 percent; 28 V; DC characteristics; RF characteristics; SOI RF power LDMOSFET; Si; class A amplifier; compression; integrated power amplifier; model parameter extraction; output power; power gain; power-added efficiency; Dielectric substrates; Fabrication; Gallium arsenide; Germanium silicon alloys; Implants; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967336
