Title :
Comparative evaluation of high current SiC Schottky diodes and Si PN junction diodes
Author :
Jordà, X. ; Tournier, D. ; Vellvehi, M. ; Pérez, A. ; Pérez, R. ; Godignon, P. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., Barcelona, Spain
Abstract :
SiC Schottky barrier diodes (SBD) are commercially available in the 600 V breakdown voltage range and 1.2 kV SiC SBDs have been announced. In this paper we compare the behavior of recently fabricated high-current 1.2 kV SBD with that of equivalent Si diodes, underlining the high temperature working operation capability (up to 200°C), Lower reverse leakage current is obtained using Ni instead of Ti (the most spread solution) for the Schottky contact. The temperature dependence of forward characteristics, reverse leakage current and switching recovery performances have been analyzed.
Keywords :
Schottky barriers; Schottky diodes; elemental semiconductors; leakage currents; p-n junctions; silicon compounds; 1.2 kV; 600 V; PN junction diodes; Schottky barrier diodes; Schottky contact; SiC; high temperature working operation; reverse leakage current; switching recovery; Fabrication; Leakage current; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature dependence; Voltage;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504315
