• DocumentCode
    1930799
  • Title

    Unified model of the enhancement-mode MOS transistor

  • Author

    Kordalski, W J

  • Author_Institution
    Technical University of Gda¿sk, Institute of Electronic Technology, Majakowskiego 11/12, PL 80-952 Gda¿sk, Poland
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    603
  • Lastpage
    606
  • Abstract
    A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long- and short-channel MOS transistors.
  • Keywords
    Analytical models; Dielectrics and electrical insulation; FETs; Lead; MOSFET circuits; Numerical analysis; Physics; Publishing; Scattering; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1930799