Simple design equations for broadband class E power amplifiers with reactance compensation

Author

Grebennikov, A.

Author_Institution

M/A-COM Eurotec Oper., Cork, Ireland

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2143

Abstract

In this paper, a simple analytical design approach to determine the parameters of the loading networks to design broadband class E amplifiers is presented. The design equations are given for each element of single and double resonant loading circuits. The analysis and simulation were performed on the example of high-voltage LDMOSFET power amplifier, which show that in octave-band of 100-200 MHz the power gain of 10 dB with deviation of only /spl plusmn/0.5 dB and the drain efficiency of about 70% and higher can be achieved.

Keywords

MOSFET circuits; VHF amplifiers; circuit resonance; compensation; electric reactance; power amplifiers; wideband amplifiers; 10 dB; 100 to 200 MHz; 70 percent; analytical design; broadband class E power amplifier; computer simulation; drain efficiency; high-voltage LDMOSFET power amplifier; power gain; reactance compensation; resonant loading circuit; Analytical models; Broadband amplifiers; Circuit analysis; Circuit simulation; Equations; High power amplifiers; Performance analysis; Power amplifiers; RLC circuits; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967338

Filename

967338