DocumentCode :
1930850
Title :
A four million pixel CCD image sensor
Author :
Lee, T.H. ; Burkey, B.C. ; Khosla, R.P.
Author_Institution :
Microelectronics Technology Division, Eastman Kodak Company, Rochester, New York, USA 14650-2008
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
599
Lastpage :
602
Abstract :
An ultra-high resolution image sensor was developed for industrial and scientific applications. The imager is a full-frame CCD sensor, consisting of 2048 × 2048 pixels, and its image area measures 18.43 mm × 18.43 mm. The pixel size is 9 microns × 9 microns. The sensor has dual readout registers to increase the data rate. The sensor could be operated in the single or dual readout register mode depending on the user´s frame rate requirements and the data capture system. The architecture of this imager is suitable for accumulation mode operation, which results in low dark current of less than 10 pA/cm2 at room temperature. The charge transfer efficiency is 0.99999 for horizontal clock rate up to 20 MHz.
Keywords :
Area measurement; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Dark current; Image resolution; Image sensors; Pixel; Sensor systems; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436285
Link To Document :
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