Title :
Extended static CV-procedure to investigate minority carrier generation in MOS capacitors
Author :
Kerber, M. ; Schwalke, U.
Author_Institution :
Siemens AG., Corporate Research and Development, Otto Hahn Ring 6, 8000 Munich 83, F.R. Germany
Abstract :
An extension of the conventional static CV procedure is presented which explicitely monitors the equilibrium of MOS capacitors throughout the CV sweep. Simultaneously to the static capacitance the minority carrier generation current is deduced by analyzing the time dependent displacement charge.
Keywords :
Capacitance measurement; Charge measurement; Current measurement; Diodes; Displacement measurement; MOS capacitors; Performance analysis; Research and development; Time measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
