Title :
Study of self-heating effects in GaN HEMTs
Author :
Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Harris, M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Pulsed RF and I-V characterizations are performed on power GaN HEMTs. These measurements are carried out at different temperatures for the first time to understand self-heating effects and to investigate the possibility of improving heat dissipation mechanisms. These measurements are the basis for robust large-signal models.
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; thermal analysis; wide band gap semiconductors; GaN; GaN power HEMTs; heat dissipation mechanisms; pulsed I-V characterization; pulsed RF characterization; robust large-signal models; self-heating effects; Gallium nitride; HEMTs; MODFETs; Phased arrays; Power generation; Power transistors; Radio frequency; Robustness; Silicon carbide; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967340
