Title :
Analytical models for PN cross varactors
Author :
Pérez, J.A. ; González, B. ; García, J. ; Pino, J. Del ; Khemchandani, S.L. ; Hernández, A.
Author_Institution :
Inst. Univ. de Microelectron. Aplicada, Univ. de Las Palmas de Gran Canaria, Spain
Abstract :
In this paper, models for the capacitance of cross integrated varactors based in the PN junction are presented. Three different approximations are assumed, in order to reproduce the measured results of the capacitance. The relative error with the measured capacitance is under 10% in all cases.
Keywords :
capacitance measurement; p-n junctions; semiconductor device models; varactors; PN junction; capacitance measurement; cross integrated varactors; Analytical models; Capacitance measurement; Cathodes; Geometry; Integrated circuit measurements; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Varactors; Voltage;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504321
