Interface states extracted from gated diode and charge pumping measurements

This paper applies the gated diode and the charge pumping method for the extraction of interface states in MOS transistors and gives a comparison of the two techniques. The gated-diode arrangement with floating source will be critically examined. With both methods the interface state densities are extracted at midgap for virgin and for homogeneously stressed MOS transistors. Good agreement for both methods is obtained. The temperature dependence of the surface generation current is also measured.