DocumentCode
1930951
Title
Current performance of high speed transistors
Author
Viñas, Lluís Prat ; Llorens, D.B.
Author_Institution
Departament d´´Enginyeria Electronica, Univ. Politecnica de Catalunya, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
111
Lastpage
113
Abstract
This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.
Keywords
Ge-Si alloys; III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; InP; SiGe; heterojunction bipolar transistors; high electron mobility transistors; high speed performance parameters; high speed transistors; material properties; structure characteristics; transition frequency; Electron mobility; Frequency; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MESFETs; MODFETs; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504322
Filename
1504322
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