Planar InP/InGaAs avalanche photodiodes fabricated without a guard ring using silicon implantation and two-stage atmospheric pressure MOVPE

We report the design, fabrication and performance of separate absorption, grading and multiplication layer avalanche photodetectors formed without a guard-ring by using localised implantation of silicon to define the field control layer and atmospheric pressure MOVPE to obtain large areas of uniform low doped material. The described process is potentially more controlled than conventional avalanche photodetector fabrication schedules, and yields high gain, low noise devices capable of operating at bit rates up to at least 2Gbit/sec.