• DocumentCode
    1931073
  • Title

    Numerical modelling based comparison of the submicrometre III-V compounds MESFET´s performance

  • Author

    Ryzhii, V. ; Khrenov, G.

  • Author_Institution
    Institute of Physics and Technology USSR Academy of Sciences, Krasikov Str. 25a, Moscow, 117218 USSR
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    555
  • Lastpage
    557
  • Abstract
    Performances of submicrometer scaled-down MESFETs based on Ga0.47 In0.53As, InP and GaAs are investigated by Monte-Carlo two-dimensional numerical simulation method.
  • Keywords
    Electrons; Fabrication; Gallium arsenide; III-V semiconductor materials; Indium phosphide; MESFETs; Numerical models; Numerical simulation; Optical scattering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931073