Monolithic quantum tunnel diode-based C-band oscillator and LNA

Author

Bergman, J.I. ; Han, Shuo ; Laskar, J. ; El-Zein, N. ; Ageno, S. ; Deshpande, M. ; Nair, V.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2183

Abstract

We report on the design and microwave performance of a novel tunnel diode-based oscillator designed for 5 GHz in a monolithic IC technology. The fundamental output power of the oscillator is -18.8 dBm at 4.7 GHz, with second and third harmonic power levels at -43.2 dBm and -40.5 dBm, respectively. Phase noise of -87.0 dBc/Hz at 1 MHz was observed. While output power can be greatly increased by combining the tunnel diode with an integrated transistor, this design offers excellent compactness and low power consumption. In addition, an LNA design for 6 GHz in the same IC technology is presented.

Keywords

MMIC amplifiers; MMIC oscillators; low-power electronics; tunnel diode amplifiers; tunnel diode oscillators; 5 GHz; 6 GHz; C-band oscillator; NDR HITD; low-noise amplifier; low-power operation; monolithic microwave IC technology; output power; phase noise; quantum tunnel diode; Diodes; Energy consumption; MMICs; Microwave integrated circuits; Microwave oscillators; Microwave technology; Monolithic integrated circuits; Phase noise; Power generation; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967348

Filename

967348