Infrared temperature characterization of high power RF devices

Author

Mahalingam, M. ; Mares, E.

Author_Institution

Wireless Infrastruct. Syst. Div., Motorola Inc., Tempe, AZ, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

2199

Abstract

Infrared microscopy measurement methodology has been refined to measure high power RF device temperatures accurately at high frequencies (1 GHz, 2+ GHz). Special difficulties due to translucent nature of Si are resolved. The methodology is applied to practical Si bipolar, Si LDMOS and GaAs RF power devices. Product thermal performance characterization method is established. Methodology is also applied in product development efforts.

Keywords

UHF bipolar transistors; UHF field effect transistors; optical microscopy; power semiconductor devices; product development; semiconductor device reliability; semiconductor device testing; 1 to 2 GHz; GaAs; LDMOS; RF power devices; Si; bipolar; high power RF devices; infrared microscopy measurement methodology; infrared temperature characterization; product development efforts; thermal performance characterization method; translucent nature; Frequency measurement; Liquid crystal devices; Microscopy; Power measurement; Radio frequency; Semiconductor device measurement; Semiconductor device reliability; Semiconductor devices; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967352

Filename

967352