Title :
High-accuracy digital 5-bit 0.8-2 GHz MMIC RF attenuator for cellular phones
Author :
Kinayman, N. ; Bonilla, M. ; Kelcourse, M.F. ; Redus, J. ; Anderson, K.
Author_Institution :
Corp. Res. & Dev., M/A-COM Inc., Lowell, MA, USA
Abstract :
High-accuracy digital MMIC RF attenuator for cellular phones is presented. Designing high accuracy digital MMIC RF attenuators is challenging due to the non-ideal characteristics of the transistor switches used in the attenuator and other parasitic effects. This problem can be circumvented by simultaneous optimization of the attenuator circuit at every possible input bit configuration. Without this optimization scheme, it would be extremely difficult to compensate the non-ideal transistor switch characteristics to achieve high accuracy. A design methodology is presented.
Keywords :
UHF integrated circuits; attenuators; cellular radio; circuit optimisation; field effect MMIC; field effect digital integrated circuits; field effect transistor switches; integrated circuit design; microwave switches; telephone sets; 0.8 to 2 GHz; 5 bit; attenuator circuit optimisation; cellular phones; design methodology; digital MMIC RF attenuator; high-accuracy RF attenuator; nonideal transistor switch characteristics; parasitic effects; transistor switches; Attenuation measurement; Attenuators; Cellular phones; Impedance; Linearity; MMICs; Manufacturing; Radio frequency; Resistors; Switches;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967360
