Title :
A Monte Carlo simulator including generation recombination processes
Author :
Reggiani, Lino ; Kuhn, Tilmann ; Varani, Luca ; Gasquet, Daniel ; Vaissiere, Jean Claude ; Nougier, Jean Pierre
Author_Institution :
Dipartimento di Fisica e Centro Interuniversitario di Struttura della Materia, Universita´´di Modena, Via Campi 213/A, 41100 Modena, Italy
Abstract :
We present an advanced Monte Carlo code (SIHOLE90) which is applied to p-Si and includes generation recombination processes from shallow impurity levels, impact ionization from neutral impurities and the Poole-Frenkel effect. The very good agreement obtained between calculations and experiments supports the physical reliability of the code which should provide useful information for device modeling.
Keywords :
Conductivity; Electron mobility; Hot carriers; Impurities; Light scattering; Monte Carlo methods; Optical scattering; Radiative recombination; Reliability theory; Semiconductor device reliability;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
