• DocumentCode
    1931438
  • Title

    Pentacene organic thin-film transistors fabricated in a nonlithographic process

  • Author

    Voz, C. ; Puigdollers, J. ; Orpella, A. ; Martín, I. ; Vetter, M. ; Alcubilla, R.

  • Author_Institution
    Dept. Enginyeria Electronica, Univ. Politecnica Catalunya, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    Pentacene thin-film transistors using polymethil methacrylate as a gate dielectric have been fabricated. The maximum temperature throughout the whole process was 170 °C. The organic devices show satisfactory p-type electrical characteristics with on/off ratios exceeding 103 for VGS ranging from -30 to 30 V. The field-effect mobility and threshold voltage were around 0.01 cm2/V·s and -14 V respectively.
  • Keywords
    organic semiconductors; thin film transistors; -14 V; -30 to 30 V; 170 C; field-effect mobility; gate dielectric; nonlithographic process; organic devices; p-type electrical characteristics; pentacene organic thin-film transistors; polymethil methacrylate; threshold voltage; Crystallization; Dielectric substrates; Electric variables; Electrodes; Gold; Organic thin film transistors; Pentacene; Silicon; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504344
  • Filename
    1504344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931438