Title :
Fabrication and characteristics of a MBE-grown InAlAs/InGaAs heterojunction bipolar transistor using an embedded collector
Author :
Su, L.M. ; Kunze, H. ; Gibis ; Mekonnen, G. ; Schlaak, W. ; Grote, N.
Abstract :
InAlAs/InGaAs HBTs employing an implanted collector were fabricated and characterized. Current gains of the order of 100 and transit-frequencies of 9-10 GHz were attained. No detrimental effects of implantation on the epitaxial overgrowth were observed.
Keywords :
Contact resistance; Doping profiles; Epitaxial layers; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
