DocumentCode :
1931487
Title :
Magnetoresistive characteristics of Schottky - tunnel hot electron spin transistors
Author :
Tondra, M. ; Wang, O. ; Daughton, J.M.
Author_Institution :
Nonvolatile Electronics
fYear :
1999
fDate :
18-21 May 1999
Keywords :
Electrons; Magnetic circuits; Magnetic devices; Magnetoresistive devices; Reflection; Schottky barriers; Silicon; Switches; Tunneling magnetoresistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 1999. Digest of INTERMAG 99. 1999 IEEE International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-5555-5
Type :
conf
DOI :
10.1109/INTMAG.1999.837720
Filename :
837720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1931487
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