DocumentCode
1931487
Title
Magnetoresistive characteristics of Schottky - tunnel hot electron spin transistors
Author
Tondra, M. ; Wang, O. ; Daughton, J.M.
Author_Institution
Nonvolatile Electronics
fYear
1999
fDate
18-21 May 1999
Keywords
Electrons; Magnetic circuits; Magnetic devices; Magnetoresistive devices; Reflection; Schottky barriers; Silicon; Switches; Tunneling magnetoresistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 1999. Digest of INTERMAG 99. 1999 IEEE International
Conference_Location
Kyongju, Korea
Print_ISBN
0-7803-5555-5
Type
conf
DOI
10.1109/INTMAG.1999.837720
Filename
837720
Link To Document