DocumentCode :
1931490
Title :
Noise bipolar models for SiGe HBT
Author :
Milena, Juan Carlos ; Lopez-Gonzalez, J.M. ; García-Loureiro, Antonio J.
Author_Institution :
Univ. Politecnica de Catalunya, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
171
Lastpage :
174
Abstract :
This work is dedicated to compare the state of art of Y-parameter based bipolar noise models using a SiGe low noise heterojunction bipolar transistors. Minimum noise figure, Fmin, comparison is done using measured and simulated Y-parameters and both are compared with Fmin measurements. It is shown that a good agreement is only obtained at low currents. The discrepancies between measured and modeled Fmin are discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Y-parameters; bipolar noise model; circuit bipolar model; heterojunction bipolar transistors; low noise amplifier; noise figure; Admittance; Circuit noise; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Noise generators; Noise measurement; SPICE; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504347
Filename :
1504347
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1931490
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