• DocumentCode
    1931490
  • Title

    Noise bipolar models for SiGe HBT

  • Author

    Milena, Juan Carlos ; Lopez-Gonzalez, J.M. ; García-Loureiro, Antonio J.

  • Author_Institution
    Univ. Politecnica de Catalunya, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    171
  • Lastpage
    174
  • Abstract
    This work is dedicated to compare the state of art of Y-parameter based bipolar noise models using a SiGe low noise heterojunction bipolar transistors. Minimum noise figure, Fmin, comparison is done using measured and simulated Y-parameters and both are compared with Fmin measurements. It is shown that a good agreement is only obtained at low currents. The discrepancies between measured and modeled Fmin are discussed.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Y-parameters; bipolar noise model; circuit bipolar model; heterojunction bipolar transistors; low noise amplifier; noise figure; Admittance; Circuit noise; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Noise generators; Noise measurement; SPICE; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504347
  • Filename
    1504347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931490