DocumentCode
1931548
Title
Modelling of new SiGeC HBTs
Author
Nuñez, Juan Manuel ; López-González, Juan M. ; García-Loureiro, Antonio J.
Author_Institution
Univ. Politecnica de Catalunya, Barcelona, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
179
Lastpage
182
Abstract
Addition of carbon in the base layer of SiGe HBTs has been reported as an effective way to achieve high-performance devices. This paper models SiGeC HBTs comparing DC and AC electrical characteristics, with and without carbon, using commercial numerical device simulator ATLAS.
Keywords
Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor device models; AC electrical characteristic; ATLAS; DC electrical characteristic; SiGeC; carbon; heterojunction bipolar transistor; numerical device simulator; Carbon dioxide; Charge carrier lifetime; Conducting materials; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Photonic band gap; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504349
Filename
1504349
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