A study of low noise JFETs exposed to large doses of gamma-rays and neutrons

Author

Citterio, Maw ; Rescia, Sergio ; Radeka, Veljko

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

794

Abstract

The monolithic process has proved able to retain the radiation hardness characteristics of discrete JFETs (junction field-effect transistors) up to 1 MGy (100 Mrad) of ⁶⁰Co γ rays. Neutron irradiation tests on discrete devices confirm that Si JFETs show very moderate damage up to 10¹³ Ncm^-2. In comparative tests Si JFET preamplifiers have been irradiated up to 600 kGy (60 Mrad) of γ rays and up to 4×10¹⁴ Ncm^-2. The preamplifiers were able to withstand the tests and have shown less radiation sensitivity than GaAs MESFET preamplifiers in the region of peaking times longer than ≈40 ns. The results are of interest in connection with the survival of front-end electronics for hadron collider experiments which may be subject to in excess of 30 Mrad of ionizing radiation and 10¹⁴ Ncm^-2 over a 10-year period

Keywords

gamma-ray effects; junction gate field effect transistors; neutron effects; nuclear electronics; radiation hardening (electronics); 1 MGy; ⁶⁰Co gamma rays; GaAs MESFET preamplifiers; Si JFET preamplifiers; Si JFETs; discrete JFETs; discrete devices; front-end electronics; gamma-rays; hadron collider experiments; ionizing radiation; junction field-effect transistors; low noise JFETs; monolithic process; neutron irradiation tests; neutrons; peaking times; radiation hardness; radiation sensitivity; Cryogenics; Detectors; Doping; Ionizing radiation; JFETs; Large Hadron Collider; Neutrons; Signal processing; Silicon; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301428

Filename

301428