• DocumentCode
    1931686
  • Title

    Investigation of the type inversion phenomena: resistivity and carrier mobility in the space charge region and electrical neutral bulk neutron irradiated silicon p+-n junction detectors

  • Author

    Li, Zheng ; Eremin, V. ; Strokan, N. ; Verbitskaya, E.

  • Author_Institution
    Brookhaven Nat. Lab., Upton, NY, USA
  • fYear
    1992
  • fDate
    25-31 Oct 1992
  • Firstpage
    800
  • Abstract
    The changes of both effective impurity concentration N eff and kinetics of charge collection in neutron-irradiated silicon p+-n junction detectors are studied in the range of neutron fluences φn=5×1011-6×10 13 n/cm2. High resistivity in the ENB suggests that, while the carrier mobilities in the SCR are affected little in the fluence range studied (<1×1014 n /cm2), the hole mobility in the ENB may be degraded significantly
  • Keywords
    carrier mobility; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; neutron effects; semiconductor counters; silicon; ENB; SCR; Si; Si detectors; carrier mobility; charge collection; effective impurity concentration; electrical neutral bulk neutron irradiated silicon p+-n junction detectors; hole mobility; neutron fluences; resistivity; space charge region; type inversion phenomena; Conductivity; Detectors; Electrons; Laboratories; Neutrons; Semiconductor counters; Shape; Silicon; Space charge; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-0884-0
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1992.301430
  • Filename
    301430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931686