Title :
Identification and characterisation of noise sources in SIMOX MOSFETs
Author :
Elewa, T. ; Boukriss, B. ; Haddara, H. ; Chovet, A. ; Crístoloveanu, S.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (UA-CNRS), INPG, ENSERG, BP 257, 38016 Grenoble Cedex, France.
Abstract :
A simple model and an adequate experimental procedure are proposed for the separation of the noise sources related to the front interface, back interface and film volume. This allows the evaluation of the bulk defects and interface traps which are key parameters in the optimization of CMOS-SOI processes.
Keywords :
Active noise reduction; Crystalline materials; Low-frequency noise; MOSFETs; Noise generators; Noise level; Semiconductor device noise; Semiconductor films; Silicon on insulator technology; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
