Title :
Band to band absorption coefficients in heavily doped Si and SiGe
Author :
Nathan, A. ; Jain, S.C. ; Briglio, D.R. ; McGregor, J.M. ; Roulston, D.J.
Author_Institution :
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Abstract :
The band to band absorption coefficients in heavily doped Si and Si1-xGex have been computed (for Ge fraction, x ¿ 0.3) using recent values of impurity concentration dependent band gap narrowing. The presence of Ge in highly doped B: Si appears to reduce the band to band absorpton coefficients. This can be attributed to the relatively smaller gap shrinkage and the higher Fermi levels in highly doped SiGe.
Keywords :
Absorption; Boron; Data mining; Doping; Germanium silicon alloys; Impurities; Phonons; Photonic band gap; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
