DocumentCode
1931817
Title
Detection of near IR radiation by SiGe material
Author
Sopko, B. ; Pavlu, J. ; Prochazka, I. ; Macha, I.
Author_Institution
Czech Technical University, Faculty of Nuclear Science and Physical Engineering, Brehova 7, CS-115 19 Prague 1
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
413
Lastpage
416
Abstract
We are reporting on the novel design of the fast photodiode for satellite laser ranging. The new technique, based on Germanium ion implantation into Si substrate, is used to increase the quantum efficiency for infra-red photons. The Single Photon Avalanche Diodes (SPADs) on ``pure´´ silicon are conventionally used for that purposes, but only very low quantum efficiency at the wavelength of 1 ¿m is obtained. Cur new advanced technology of the SPADs, allows an increase of the quantum efficiency at the wavelength of 1.07¿m by the factor 2-3.
Keywords
Diodes; Germanium silicon alloys; Infrared detectors; Ion implantation; Optical design; Optical materials; Photodiodes; Radiation detectors; Satellites; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436328
Link To Document