Multiparametric gas sensors with porous silicon optical microcavities

Author

Gaburro, Z. ; Faglia, G. ; Baratto, C. ; Sberveglieri, G. ; Pavesi, L.

Author_Institution

INFM & Dept. of Phys., Trento Univ., Italy

Volume

1

fYear

2001

fDate

2001

Firstpage

19

Abstract

We show that porous silicon optical microcavities can be effectively used as multiparametric gas sensors. Beside the electrical conduction, interesting gas-sensing parameters of porous silicon microcavities are the photoluminescence intensity and the spectral position of the resonance cavity peak, which depends on the index of refraction of the surrounding gas. The dynamic response of the peak shift is also discussed

Keywords

dynamic response; elemental semiconductors; gas sensors; micro-optics; optical sensors; photoluminescence; porous semiconductors; silicon; Si; cavity dielectric mirrors; dynamic response; electrochemical etching; ethanol filling; gas penetration dynamics; high resistivity samples; multiparametric gas sensors; p-type wafers; peak shift; photoluminescence intensity; porous silicon optical microcavities; refraction index; resonance cavity peak; Gas detectors; Gases; Microcavities; Optical filters; Optical refraction; Optical sensors; Optical variables control; Photoluminescence; Resonance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967408

Filename

967408