Title :
Accuracy of residual phase noise characterization of active RF/microwave devices
Author :
Thomas, Donald G. ; Branner, G.R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
Abstract :
Phase noise is widely recognized as a crucial parameter in many classes of microwave communication systems. Phase noise can deteriorate the signal-to-noise ratio and can cause severe problems in data fidelity in receiving systems. A precise measurement of phase noise characteristics is significant in the development of system architecture and component selection. The measurement accuracy of phase noise tests can be seriously corrupted by the effects of the bias supply of active devices being characterized for spectral density. This paper presents an in-depth analysis of accuracy problems encountered with such bias supply effects and provides a quantitative solution to these problems
Keywords :
UHF measurement; UHF transistors; electric noise measurement; microwave measurement; microwave transistors; phase noise; semiconductor device noise; semiconductor device testing; SNR; active RF devices; active microwave devices; bias supply effects; measurement accuracy; phase noise tests; residual phase noise characterization; signal-to-noise ratio; 1f noise; Bipolar transistors; Fluctuations; Microwave devices; Noise measurement; Phase measurement; Phase noise; Radio frequency; Testing; Vibrations;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.593192
