The optoelectronic properties of silicon nanostructures: the role of the interfaces

Author

Ossicini, Stefano

Author_Institution

Ist. Nazionale per la Fisica della Materia, Universita di Modena e Reggio Emilia, Italy

Volume

1

fYear

2001

fDate

2001

Firstpage

23

Abstract

The optoelectronic properties of Si nanostructures are studied ab initio to investigate their dependence on the dimensions, on the symmetry and on the bonding situations at the interfaces. We find that the dimensions are significative for the transition oscillator strengths and that the symmetry of the lattice changes the nature of the gap. The saturating species and/or the presence of dangling bonds play an important role in the formation of interface states that can occupy or leave free the band gap so making worse or improving the optical properties

Keywords

ab initio calculations; bonds (chemical); dangling bonds; elemental semiconductors; energy gap; interface states; nanostructured materials; oscillator strengths; silicon; Si; ab initio model; band gap; dangling bonds; interface bonding; interface states; lattice symmetry; optoelectronic properties; silicon nanostructure; transition oscillator strength; Bonding; Interface states; Lattices; Nanostructures; Optical saturation; Oscillators; Photonic band gap; Radiative recombination; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967409

Filename

967409