Title :
Radiation hardness measurements on bipolar test structures and an amplifier-comparator circuit
Author :
Cartiglia, N. ; Dorfan, D.E. ; Pitzl, D. ; Rahn, J. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Spencer, E.N. ; Wilde, Mark ; Turala, M. ; Dabrowski, W.
Author_Institution :
Santa Cruz Inst. for Particle Phys., California Univ., CA, USA
Abstract :
The authors present radiation hardness measurements of both small-scale bipolar test structures and full amplifier-comparator circuits built in the Tektronix SHPi process. BJTs (bipolar junction transistors (npm of various sizes and a lateral pnp), JFETs (junction field effect transistors), diodes, and resistors have been irradiated to 60Co doses of up to 5 Mrad and to fluences of up to 1.1×1014 cm-2 of 650 MeV protons. Radiation effects on transistor noise and current gain, the value of the pinch-off voltage and output resistance of the JFET, leakage of diodes, and resistor values are discussed. A full 64-channel amplifier-comparator circuit was exposed to 3.5 Mrad of gammas, and changes in gain and noise were measured. It is concluded that the Tektronix SHPi process appears to offer sufficient radiation hardness for the design of fast, low-power amplifier circuits for the Superconducting Super Collider
Keywords :
amplifiers; bipolar integrated circuits; comparators (circuits); gamma-ray effects; particle accelerator accessories; proton effects; radiation hardening (electronics); 3.5 Mrad; 5 Mrad; 64-channel amplifier-comparator circuit; 650 MeV; 60Co doses; BJTs; JFETs; Superconducting Super Collider; Tektronix SHPi process; amplifier-comparator circuit; bipolar junction transistors; bipolar test structures; current gain; diode leakage; diodes; fluences; gammas; junction field effect transistors; lateral pnp; npm; output resistance; pinch-off voltage; protons; radiation hardness; resistors; small-scale bipolar test structures; transistor noise; Circuit noise; Circuit testing; Diodes; FETs; JFETs; Protons; Radiation effects; Resistors; Superconducting device noise; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301437
