DocumentCode
1931884
Title
Optical characterisation of InGaAs/InP and InGaAs/InGaAsP MQW structures for optoelectronic applications
Author
Wolter, K. ; Schwedler, R. ; Reinhardt, F. ; Kersting, R. ; Zhou, X Q. ; Grutzmacher, D. ; Kurz, H.
Author_Institution
Institute of Semiconductor Electronics - Basislabor. RWTH Aachen. Sommerfeldstr., D-5100 Aachen. FRG
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
405
Lastpage
408
Abstract
We performed CW and time resolved photoluminescence (PL) measurements on on a series of conventional InGaI/InP MQW structures grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). Variation of sample temperature allows to distinct between regions with different well widths in CW experinments. The relative sizes of areas vith different well widths are determined. In time resolved PL experiments the carrier capture from the barriers into the quantum wells has been investigated. An ambipolar capture time constant of 5 ± 2 ps is evaluated. Finally the optical gain of these structures is compared with InGaAs/ InP- and InGaAsP/InP-MQW-separate-confinement structures.
Keywords
Epitaxial growth; Indium gallium arsenide; Indium phosphide; Performance evaluation; Phase measurement; Photoluminescence; Pressure measurement; Quantum well devices; Temperature; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436330
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