Title :
Sidewall effects in submicron bipolar transistors
Author :
Decoutere, S. ; Deferm, L. ; Claeys, C. ; Declerck, G.
Author_Institution :
IMEC, Kapeldreef 75, 3030 Leuven, Belgium.
Abstract :
Analytical models are presented to calculate the two-dimensional (2D) minority carrier distribution and related currents in the base and emitter. 2D effects on the base and collector current, current gain and charge storage are discussed for different technologies.
Keywords :
Analytical models; Bipolar transistors; Boundary conditions; Electron emission; Equations; Impurities; Niobium; Semiconductor process modeling; Simultaneous localization and mapping; Spontaneous emission;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
