DocumentCode
1932037
Title
Sidewall effects in submicron bipolar transistors
Author
Decoutere, S. ; Deferm, L. ; Claeys, C. ; Declerck, G.
Author_Institution
IMEC, Kapeldreef 75, 3030 Leuven, Belgium.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
385
Lastpage
388
Abstract
Analytical models are presented to calculate the two-dimensional (2D) minority carrier distribution and related currents in the base and emitter. 2D effects on the base and collector current, current gain and charge storage are discussed for different technologies.
Keywords
Analytical models; Bipolar transistors; Boundary conditions; Electron emission; Equations; Impurities; Niobium; Semiconductor process modeling; Simultaneous localization and mapping; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436337
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