Internal structure of the nanosized sol-gel ITO thin films

Author

Stoica, T.F. ; Teodorescu, V.S. ; Blanchin, M.G. ; Stoica, T.A. ; Gartner, M. ; Zaharescu, M.

Author_Institution

Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France

Volume

1

fYear

2001

fDate

2001

Firstpage

63

Abstract

The alkoxide route and the spinning deposition were used to prepare sol gel ITO films. The morphology and crystalline structure were investigated by Cross-section Transmission Electron Microscopy and Atomic Force Microscopy. The inside of the ITO layer has three regions of different porosity and the basic crystalline structure is that of the In₂O₃ lattice. Three types of surface morphological structures were found from AFM images

Keywords

atomic force microscopy; indium compounds; nanostructured materials; porosity; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; transmission electron microscopy; ITO; InSnO; alkoxide method; atomic force microscopy; cross-sectional transmission electron microscopy; crystalline structure; internal structure; nanosized ITO thin film; porosity; sol-gel synthesis; spinning deposition; surface morphology; Atomic force microscopy; Atomic layer deposition; Crystallization; Indium tin oxide; Lattices; Morphology; Nanostructures; Spinning; Transistors; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967417

Filename

967417