Choices for the epitaxial growth of GalnP/GaAs dual junction concentrator solar cells

In this work we analyse the different possibilities that the GalnP/GaAs double junction solar cell structures grow by MOCVD offers, so as to achieve energy conversion efficiencies higher than 30 %. These possibilities comprise changes in the configuration of layers as well as the variation of the different parameters that affect the epitaxy process, such as temperature, growing time, dopants, partial pressure of gases, etc.