Title :
High-speed radiation-hardened ECL circuits on bonded SOI wafers
Author :
Ueno, Katsunobu ; Kawano, Masanobu ; Arimoto, Yoshihiro
Author_Institution :
Electronic Device Group, Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
Abstract :
This paper describes ECL circuits with completely isolated transistors on bonded silicon-on-insulator (SOI) wafers. We have clarified the superiority of SOI circuits over bulk-silicon circuits in terms of circuit speed and alpha-particle-induced soft errors.
Keywords :
Circuits; Electrodes; Isolation technology; Laboratories; Parasitic capacitance; Ring oscillators; Silicon; Time measurement; Transistors; Wafer bonding;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
